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A Product Line of Diodes Incorporated
ZXMN10A08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS RDS(on) ID TA = 25C 1.9A
Features and Benefits
* * *
Low on-resistance Fast switching speed Qualified to AEC-Q101 Standards for High Reliability
100V
0.25
Mechanical Data
* Case: SOT23-6 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (approximate)
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, this makes it ideal for high efficiency power management applications.
* * * *
* * * * *
DC-DC Converters Power management functions Disconnect Switches Motor control
SOT23-6
D
D D G D D S
Package Pin Out
G S
Equivalent Circuit
TOP VIEW
Ordering Information
Product ZXMN10A08E6TA ZXMN10A08E6TC Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000
Marking Information
10A8
10A8 = Product Type Marking Code
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMN10A08E6
Maximum Ratings
Drain-Source voltage Gate-Source voltage Continuous Drain current
@TA = 25C unless otherwise specified Symbol VDSS VGS ID IDM IS ISM Value 100 20 1.9 1.5 1.5 8.6 2.5 8.6 Unit V V A A A A
Characteristic
(Note 2) VGS = 10V TA = 70C (Note 2) (Note 1)
Pulsed Drain current (Note 3) Continuous Source current (Body diode) (Note 2) Pulsed Source current (Body diode) (Note 3)
Thermal Characteristics
Characteristic Power dissipation Linear derating factor Power dissipation Linear derating factor Thermal Resistance, Junction to ambient Operating and storage temperature range
Notes:
Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) RJA TJ, TSTG
Value 1.1 8.8 1.7 13.6 113 73 -55 to 150
Unit W mW/C W mW/C C/W C
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 2. For a device surface mounted on FR4 PCB measured at t 5 sec. 3. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse current 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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ZXMN10A08E6
Thermal Characteristics
10
RDS(on)
1.2
Max Power Dissipation (W)
IC Drain Current (A)
Limited
1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160
1
DC 1s 100ms 10ms 1ms 100s
100m
10m
Single Pulse Tamb=25C
100m
1
10
100
VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
120
Derating Curve
Thermal Resistance (C/W)
80 60 40
D=0.2 Single Pulse D=0.05 D=0.1 D=0.5
Maximum Power (W)
100
Tamb=25C
100
Single Pulse T amb=25C
10
20 100 1m 10m 100m 1
1 100 1m 10m 100m 1 10 100 1k
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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ZXMN10A08E6
Electrical Characteristics
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage
@TA = 25C unless otherwise specified Symbol V(BR)DSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min 100 2 Typ 5.0 0.87 27 32 405 28.2 14.2 4.2 7.7 1.8 2.1 3.4 2.2 8 3.2 Max 0.5 100 4 0.25 0.30 0.95 Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns VDD = 30V, VGS = 10V ID = 1.2A, RG 6.0 VDS = 50V, VGS = 10V ID = 1.2A VDS = 50V, VGS = 5V ID = 1.2A VDS = 50V, VGS = 0V f = 1MHz Test Condition ID = 250A, VGS = 0V VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V ID = 250A, VDS = VGS VGS = 10V, ID = 3.2A VGS = 6V, ID = 2.6A VDS = 15V, ID = 3.2A IS = 3.2A, VGS = 0V IF = 1.2A, di/dt = 100A/s
Static Drain-Source On-Resistance (Note 4) Forward Transconductance (Notes 4 & 6) Diode Forward Voltage (Note 4) Reverse recovery time (Note 6) Reverse recovery charge (Note 6) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 5) Turn-On Rise Time (Note 5) Turn-Off Delay Time (Note 5) Turn-Off Fall Time (Note 5)
Notes:
4. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 5. Switching characteristics are independent of operating junction temperatures. 6. For design aid only, not subject to production testing.
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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ZXMN10A08E6 Typical Characteristics
10
T = 25C
10V
10
T = 150C
10V 5V 4.5V 4V 3.5V
ID Drain Current (A)
5V
1
4.5V 4V
ID Drain Current (A)
1
0.1
VGS 3.5V
0.1
3V VGS
0.01 0.1 1 10
0.01 0.1 1 10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
2.0 Normalised RDS(on) and VGS(th) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
Output Characteristics
VGS = 10V ID = 3.2A RDS(on)
VDS = 10V
ID Drain Current (A)
1
T = 150C
T = 25C
VGS(th) VGS = VDS ID = 250uA
0.1
T = -55C
3
4
5
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance () 100
VGS 4V 4.5V T = 25C
Normalised Curves v Temperature
10 ISD Reverse Drain Current (A)
3.5V
T = 150C
10
5V
1
T = 25C
1
10V
0.1
0.1 0.01
0.01
0.1
1
10
0.4
0.6
0.8
1.0
On-Resistance v Drain Current
ID Drain Current (A)
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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ZXMN10A08E6 Typical Characteristics - continued
600
10
f = 1MHz
C Capacitance (pF)
500 400
CISS
VGS Gate-Source Voltage (V)
VGS = 0V
ID = 1.2A
8 6 4 2
VDS = 50V
300 200 100 0 0.1 1
COSS CRSS
10
100
0
0
1
2
3
4
5
6
7
8
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
Test Circuits
QG 12V
Current regulator
50k Same as D.U.T
VG
Q GS
Q GD V DS IG D.U.T ID V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS 90% V GS RG 10% V GS td(on) t(on) tr td(off) t(on) tr RD V DS VDD
Switching time waveforms
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
Switching time test circuit
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ZXMN10A08E6 Package Outline Dimensions
DIM A A1 A2 b C D E E1 L e e1 L
Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 0
Inches Max. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 Min. 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF 0 Max. 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002
10
10
Suggested Pad Layout
0.95 0.037 1.06 0.042 2.2 0.087
0.65 0.026
mm inches
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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(c) Diodes Incorporated
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ZXMN10A08E6
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
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October 2009
(c) Diodes Incorporated

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